title: 2012 description: Vertical FETs. Lateral hBN circuitry. GO water membranes. Etched-pore sieves. Microcavity photodetectors. date: 2012-01-01 tags:
- timeline
Evidence: Well-supported device and membrane papers. Market slides stay forecasts.
Devices
- Britnell et al., Science 335, 947 (2012). Vertical graphene / hBN or MoS₂ / graphene. Room-temperature on/off ~50 (hBN) and ~10,000 (MoS₂) in that prototype.
- Levendorf et al., Nature 488, 627 (2012). Patterned-regrowth lateral graphene / hBN.
- Furchi et al., Nano Lett. 12, 2773 (2012). Graphene in a Fabry–Pérot microcavity; absorption pushed above 60% in that geometry; responsivity quoted 21 mA/W. A cavity trick, not a packaged receiver.
Membranes
- Nair, Wu, Jayaram, Grigorieva, Geim, Science 335, 442 (2012). Sub-micron GO films helium-tight but water almost unimpeded (≥10^10 faster than He in that report). Capillary / humidity story. This is GO laminate, not a 2004 flake with a hole punched in it.
- Koenig / Bunch line, Nat. Nanotechnol. 7, 728 (2012). UV-oxidative pores in micrometre graphene; H₂, CO₂, Ar, N₂, CH₄, SF₆ leak rates vs effusion model. Lab sieve, not a plant membrane.
Theme
No gap, no CMOS twin. Honest near paths: RF, sensors, photonics, membranes, additives.