title: 2010 description: Nobel Prize. 100 GHz epitaxial FETs. Metre-class roll-to-roll film. hBN as a better substrate. date: 2010-10-05 tags:
- timeline
- research
Evidence: Well-supported for prize, Science FET paper, Nature Nanotechnology 30-inch film, and Nature graphene-on-hBN. Prize lectures are not product warranties.
Prize
5 October 2010: Nobel Prize in Physics to Andre Geim and Konstantin Novoselov “for groundbreaking experiments regarding the two-dimensional material graphene.” Experiments, not the word, not Wallace, not Boehm. Longer note on the same year: this page is the year entry; the older short Nobel page was merged here.
Effect: funding, national roadmaps, and a public sentence (“graphene will change everything”) that outruns device data. Related 2D crystals (hBN, TMDCs) ride the same wave.
Devices
Lin et al. (IBM), Science 327, 662 (2010) — “100-GHz Transistors from Wafer-Scale Epitaxial Graphene.” Graphene on the Si-face of SiC, 240 nm gates, f_T of 100 GHz. Compared in the paper to silicon FETs of similar gate length. Still no band gap, still a research FET.
Film area
Bae et al., Nature Nanotechnology 5, 574 (2010) — ~30-inch graphene films by roll-to-roll CVD and transfer, aimed at transparent electrodes. Optical/conductivity demo at poster size is not a phone-display qualification lot.
Stacks
Dean, Young, Meric, Lee, Wang, Sorgenfrei, Watanabe, Taniguchi, Kim, Shepard, Hone, Nature Nanotechnology 5, 722 (2010) — graphene on hexagonal boron nitride. Mobility and disorder improve versus SiO₂. This is the practical start of “the substrate is part of the device,” which becomes heterostructure physics in 2012–2018.
Policy weather
EU FET Flagship idea is already being written (Kinaret, Fal’ko, Fert, Geim among proposers in 2010–2011 accounts). Selection is 2013, not 2010.