title: 2006 description: Raman habits form. Oxide and reduction papers multiply. Device sketches outrun wafers. date: 2006-01-01 tags:
- timeline
Evidence: Well-supported as a literature-year characterization. Individual “first transistor” headlines vary by definition (field-effect on a flake vs useful circuit).
Documented science
- Raman spectroscopy (D, G, 2D/G′ bands) becomes the cheap fingerprint for layer number and disorder. Later work will warn that Raman alone does not certify a commercial powder as monolayer graphene.
- Graphene oxide reduction papers accelerate. Chemists and physicists are still not using the same sample when they say “graphene.”
- Early FET demonstrations on exfoliated flakes continue the 2004 geometry.
Commercial / program
University groups and a few startups talk transparent conductors as an ITO replacement. ITO replacement will remain a slide more than a market for years. Log specific firms only when a name and filing exist (companies).
Open
Mobility on oxide vs suspended flakes; whether chemically derived sheets can ever match cleaved crystals.